ROHM's GNP1070TC-Z and GNP1150TCA-Z 650 V Gallium Nitride (GaN) HEMTs are optimized for a wide range of power supply system applications. These products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., which develops GaN devices.

Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. The adoption of new materials such as GaN and SiC is key to improving the efficiency of power supplies.

After initiating mass production of 150 V GaN HEMTs featuring a gate breakdown voltage of 8 V in 2022 in March 2023 ROHM established control IC technology for maximizing GaN performance. This time, ROHM developed 650 V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.