Broadcom AFBR-S4N66P014M NUV-MT Silicon Photomultiplier
Broadcom AFBR-S4N66P014M NUV-MT Silicon Photomultiplier is utilized for ultra-sensitive precision measurements of single photons. The single-channel SiPM is based on the NUV-MT technology, which integrates improved photo-detection efficiency (PDE) with a decreased dark count rate and crosstalk compared to the NUV-HD technology. The device has a SPAD pitch of 40µm. By tiling multiple Broadcom AFBRS4N66P014M SiPMs, larger areas can be covered.The Broadcom AFBR-S4N66P014M array encapsulates an epoxy clear mold compound for excellent mechanical stability and robustness. The epoxy is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near UV region.
The device is well suited for detecting low-level pulsed light sources, especially Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, or LaBr3).
FEATURES
- High PDE (63% at 420nm)
- 4-side tileable, with high fill factors
- Cell pitch of 40μm
- Highly transparent epoxy protection layer
- Operating temperature range from –20°C to +60°C
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage and gain between devices
- RoHS, CFM, and REACH compliant
APPLICATIONS
- X-ray and gamma-ray detection
- Nuclear medicine
- Positron emission tomography
- Safety and security
- Physics experiments
- Cherenkov detection
