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Vishay Semiconductors VS-SC SOT-227 SiC Schottky Barrier Diodes
Vishay Semiconductors VS-SC SOT-227 Silicon Carbide Schottky Barrier Diodes are wideband gap, 650V/1200V Schottky diodes, created for high performance and ruggedness. The VS-SC SOT-227 diodes are ideal for high-speed hard switching and efficient function over a wide temperature range.
The Vishay VS-SC SOT-227 SiC diodes are recommended for all applications experiencing Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high-frequency output rectification in FBPS and LLC converters.
FEATURES
- Virtually no recovery tail and no switching losses
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- High-speed switching, low switching losses
- Positive temperature coefficient for easy paralleling
- Electrically isolated base plate
- Large creepage distance between the terminal
- Simplified mechanical designs, rapid assembly
- Designed and qualified for industrial-level
APPLICATIONS
- AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters
